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| PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113 PACKAGE DIMENSIONS 0.420 (10.67) 0.328 (8.33) 0.150 (3.81) NOM PIN 1 PIN 2 QRB1114 E S E 0.373 (9.47) 0.226 (5.74) 0.703 (17.86) S PIN 3 PIN 4 0.020 (0.51) 4X 0.150 (3.81) MIN 0.603 (15.32) REFLECTIVE SURFACE PIN1 ANODE PIN2 CATHODE PIN3 EMITTER PIN4 COLLECTOR 0.210 (5.33) SCHEMATIC 0.300 (7.62) NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. 1 2 4 3 DESCRIPTION The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes within its field of view. The area of the optimum response approximates a circle .200" in diameter. FEATURES * No contact surface sensing * Phototransistor output * Focused for sensing specular reflection * Daylight filter on photosensor * Dust cover (c) 2002 Fairchild Semiconductor Corporation Page 1 of 4 3/5/02 DS300350 PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113 ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature Soldering Temperature EMITTER Reverse Voltage Power SENSOR Dissipation(1) (Iron)(2,3,4) (Flow)(2,3) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD VCEO VECO PD Rating -40 to +85 -40 to +85 240 for 5 sec 260 for 10 sec 50 5 100 30 4.5 20 100 Units C C C C mA V mW V V mA mW QRB1114 Continuous Forward Current Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Power Dissipation(1) NOTES 1. Derate power dissipation linearly 1.67 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing. 5. D is the distance from the assembly face to the reflective surface. 6. Measured using an Eastman Kodak neutral test card with 90% diffused reflecting surface. 7. Cross talk is the photo current measured with current to the input diode and no reflecting surface. ELECTRICAL/OPTICAL CHARACTERISTICS (TA = 25C) Parameter EMITTER Forward Voltage Reverse Current Peak Emission Wavelength SENSOR Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current COUPLED On-state Collector Current QRB1113 QRB1114 Collector-Emitter Saturation Voltage Rise Time Fall Time Cross Talk IC = 1 mA IE = 0.1 mA VCE = 10 V, IF = 0 mA BVCEO BVECO ICEO 30 5 -- -- -- -- -- -- 100 V V nA IF = 40 mA VR = 5.0 V IF = 20 mA VF IR PE -- -- -- -- -- 940 1.7 100 -- V A nm Test Conditions Symbol Min. Typ. Max. Units IF = 40 mA, VCE = 5 V D = .150"(5,6) IF = 20 mA, IC = 0.5 mA VCE = 5 V, RL = 100 V IC(ON) = 5 mA IF = 40 mA, VCE = 5 V(7) IC(ON) VCE (SAT) tr tf ICX 0.20 0.60 -- -- -- -- -- -- -- 8 8 -- -- mA 0.4 -- -- 1.00 V s A (c) 2002 Fairchild Semiconductor Corporation Page 2 of 4 3/5/02 DS300350 PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113 TYPICAL PERFORMANCE CURVES Fig. 1 Forward Voltage vs. Forward Current 1.60 QRB1114 Fig. 2 Normalized Collector Current vs. Forward Current 10.0 Fig. 3 Normalized Collector Current vs. Temperature 1.00 IC - COLLECTOR CURRENT (mA) 1.40 IC - COLLECTOR CURRENT (mA) VF - FORWARD VOLTAGE (V) 1.20 1.00 0.80 0.60 0.40 0.20 0.1 1.0 10 100 1.00 0.8 0.6 0.10 0.4 0.01 0.2 VCE = 5 V D = .05" .001 0.0 10 20 30 40 50 IF = 10 m,A VCE = 5 V 0 -50 -25 0 25 50 75 IF - FORWARD CURRENT (mA) IF - FORWARD CURRENT (mA) TA - AMBIENT TEMPERATURE (C) Fig. 4 Normalized Collector Dark Current vs. Temperature 102 ICEO - COLLECTOR DARK CURRENT Fig. 5 Normalized Collector Current vs. Distance NORMALIZED COLLECTOR CURRENT (mA) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 50 100 150 200 250 300 350 400 450 500 101 VCE = 10 V 10 IF = 20 m,A VCE = 5 V 1.0 10-1 10-2 10-3 50 -25 0 25 50 75 100 DISTANCE IN MILS TA - AMBIENT TEMPERATURE (C) (c) 2002 Fairchild Semiconductor Corporation Page 3 of 4 3/5/02 DS300350 PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113 QRB1114 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. (c) 2002 Fairchild Semiconductor Corporation Page 4 of 4 3/5/02 DS300350 |
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